The thin layer of Silicon Oxide at the Gate terminal of a MOSFET acts as a c. Capacitor.

Here's why:

1. The structure of a MOSFET includes a metal gate separated from the semiconductor by a thin layer of insulating silicon dioxide.

2. When a voltage is applied to the gate, an electric field is created across the silicon dioxide layer.

3. This electric field attracts carriers into the channel region and modulates the conductivity of the channel, controlling the current flow between the source and drain.

4. This behavior of storing charge and controlling current flow is characteristic of a capacitor. Hence, the silicon dioxide layer acts as a capacitor.

Question

The thin layer of Silicon Oxide at the Gate terminal of a MOSFET acts as a c. Capacitor.

Here's why:

1. The structure of a MOSFET includes a metal gate separated from the semiconductor by a thin layer of insulating silicon dioxide.

2. When a voltage is applied to the gate, an electric field is created across the silicon dioxide layer.

3. This electric field attracts carriers into the channel region and modulates the conductivity of the channel, controlling the current flow between the source and drain.

4. This behavior of storing charge and controlling current flow is characteristic of a capacitor. Hence, the silicon dioxide layer acts as a capacitor.

Knowee AI · Accepted Answer

The thin layer of Silicon Oxide at the Gate terminal of a MOSFET acts as a c. Capacitor.

Here's why:

1. The structure of a MOSFET includes a metal gate separated from the semiconductor by a thin layer of insulating silicon dioxide.

2. When a voltage is applied to the gate, an electric field is created across the silicon dioxide layer.

3. This electric field attracts carriers into the channel region and modulates the conductivity of the channel, controlling the current flow between the source and drain.

4. This behavior of storing charge and controlling current flow is characteristic of a capacitor. Hence, the silicon dioxide layer acts as a capacitor.

MOSFET has a thin layer of Silicon Oxide at the Gate terminal, which acts as Select one:a. Semiconductorb. Inductorc. Capacitord. Resistor

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