Which of the following are Called as Wide Band-gap power devices(a) Silicon Controlled Rectifier(b) IGBT(c) Silicon Carbide MOSFET(d) Galium Nitride MOSFETSelect one:a. q, b, c, db. c, dc. a. bd. b, c, d
Question
Which of the following are Called as Wide Band-gap power devices(a) Silicon Controlled Rectifier(b) IGBT(c) Silicon Carbide MOSFET(d) Galium Nitride MOSFETSelect one:a. q, b, c, db. c, dc. a. bd. b, c, d
Solution
The wide band-gap power devices among the options given are Silicon Carbide MOSFET and Gallium Nitride MOSFET. These devices are known for their ability to operate at high temperatures, frequencies, and voltages. They have a larger band gap than traditional silicon devices, which allows for better performance in these areas. Therefore, the correct answer is b. c, d.
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