The dominant mechanism for motion of charge carriers in forward and reverse biased silicon P-N junctions is: Diffusion in forward bias, drift in reverse bias.

Here's why:

1. Forward Bias: In a forward bias condition, the P-N junction's P-side is connected to the positive terminal of the battery and the N-side is connected to the negative terminal. This reduces the barrier potential, allowing free electrons and holes to combine. This combination or movement is primarily due to the concentration gradient, which is a diffusion process.

2. Reverse Bias: In a reverse bias condition, the P-N junction's P-side is connected to the negative terminal of the battery and the N-side is connected to the positive terminal. This increases the barrier potential, preventing the free movement of electrons and holes. However, due to thermal energy, some electrons and holes can cross the junction. This movement is against the electric field, which is a drift process.

Question

The dominant mechanism for motion of charge carriers in forward and reverse biased silicon P-N junctions is: Diffusion in forward bias, drift in reverse bias.

Here's why:

1. Forward Bias: In a forward bias condition, the P-N junction's P-side is connected to the positive terminal of the battery and the N-side is connected to the negative terminal. This reduces the barrier potential, allowing free electrons and holes to combine. This combination or movement is primarily due to the concentration gradient, which is a diffusion process.

2. Reverse Bias: In a reverse bias condition, the P-N junction's P-side is connected to the negative terminal of the battery and the N-side is connected to the positive terminal. This increases the barrier potential, preventing the free movement of electrons and holes. However, due to thermal energy, some electrons and holes can cross the junction. This movement is against the electric field, which is a drift process.

Knowee AI · Accepted Answer

The dominant mechanism for motion of charge carriers in forward and reverse biased silicon P-N junctions is: Diffusion in forward bias, drift in reverse bias.

Here's why:

1. Forward Bias: In a forward bias condition, the P-N junction's P-side is connected to the positive terminal of the battery and the N-side is connected to the negative terminal. This reduces the barrier potential, allowing free electrons and holes to combine. This combination or movement is primarily due to the concentration gradient, which is a diffusion process.

2. Reverse Bias: In a reverse bias condition, the P-N junction's P-side is connected to the negative terminal of the battery and the N-side is connected to the positive terminal. This increases the barrier potential, preventing the free movement of electrons and holes. However, due to thermal energy, some electrons and holes can cross the junction. This movement is against the electric field, which is a drift process.

The dominant mechanism for motion of charge carriers in forward and reverse biased silicon P-N junctions are :Drift in forward bias, diffusion in reverse biasDiffusion in forward bias, drift in reverse biasDiffusion in both forward and reverse biasDrift in both forward and reverse bias

Question

Solution

Similar Questions

Upgrade your grade with Knowee