Identify the “false” statement: a) A high di/dt results in local overheating and damage in a thyristor. b) A thyristor may turn ON even without a gate signal due to large forward voltage. c) To turn OFF a thyristor the anode current must be brought below the latching current of the device. d) A thyristor may turn on without any control signal if dv/dt value is exceeded.

Which of the following statements are true(a) Latching Current is related to turn-on of the thyristor(b) Holding Current is related to turn-on of the thyristor(c) Latching Current is related to turn-off of the thyristor(d) Holding  Current is related to turn-off of the thyristorSelect one:a. b, cb. a, b, c, dc. a, dd. a, c

For the power semiconductor devices: IGBT, MOSFET, Diode and Thyristor, which one of the following statements is TRUE?Select one:a. All of the four are Minority Carrier devicesb. Only MOSFET is a majority carrier device, whereas rest are minority carrier devicesc. All of the four are Majority Carrier devicesd. Only MOSFET and IGBT are Minority carrier devices

For the power semiconductor devices: IGBT, MOSFET, Diode and Thyristor, which one of the following statements is TRUE?Select one:a. All of the four are Majority Carrier devicesb. Only MOSFET and IGBT are Minority carrier devicesc. Only MOSFET is a majority carrier device, whereas rest are minority carrier devicesd. All of the four are Minority Carrier devices

For the power semiconductor devices: IGBT, MOSFET, Diode and Thyristor, which one of the following statements is TRUE?Select one:a. Only MOSFET and IGBT are Minority carrier devicesb. All of the four are Minority Carrier devicesc. Only MOSFET is a majority carrier device, whereas rest are minority carrier devicesd. All of the four are Majority Carrier devices

Which of the following is correct for a gated D latch?Q output follows the input D when the enable is HIGHOnly one of the inputs can be HIGH at a timeThe output toggles if one of the inputs is held HIGHThe output complement follows the input when enabled