Knowee
Questions
Features
Study Tools

For the power semiconductor devices: IGBT, MOSFET, Diode and Thyristor, which one of the following statements is TRUE?Select one:a. All of the four are Minority Carrier devicesb. Only MOSFET is a majority carrier device, whereas rest are minority carrier devicesc. All of the four are Majority Carrier devicesd. Only MOSFET and IGBT are Minority carrier devices

Question

For the power semiconductor devices: IGBT, MOSFET, Diode and Thyristor, which one of the following statements is TRUE?Select one:a. All of the four are Minority Carrier devicesb. Only MOSFET is a majority carrier device, whereas rest are minority carrier devicesc. All of the four are Majority Carrier devicesd. Only MOSFET and IGBT are Minority carrier devices

🧐 Not the exact question you are looking for?Go ask a question

Solution

The correct answer is b. Only MOSFET is a majority carrier device, whereas rest are minority carrier devices.

Here's why:

  1. IGBT (Insulated Gate Bipolar Transistor): It is a minority carrier device. It uses both minority and majority carriers for its operation. The minority carriers give it the ability to handle high voltages.

  2. MOSFET (Metal Oxide Semiconductor Field Effect Transistor): It is a majority carrier device. It only uses majority carriers for its operation, which gives it high switching speed.

  3. Diode: It is a minority carrier device. It uses both majority and minority carriers for its operation. The minority carriers give it the ability to handle high currents.

  4. Thyristor: It is also a minority carrier device. It uses both majority and minority carriers for its operation. The minority carriers give it the ability to handle high voltages and currents.

So, the statement "Only MOSFET is a majority carrier device, whereas rest are minority carrier devices" is true.

This problem has been solved

Similar Questions

Which of the following are Called as Wide Band-gap power devices(a)  Silicon Controlled Rectifier(b) IGBT(c) Silicon Carbide MOSFET(d) Galium Nitride MOSFETSelect one:a. c, db. a. bc. b, c, dd. q, b, c, d

Which of the following features are exactly followed by IGBT(a)  IGBT has bipolar voltage blocking capability. (b)  IGBT has unipolar voltage blocking capability. (c)  IGBT is a bidirectional current device. (d) IGBT is a unidirectional current device.(e)  IGBT has dynamic characteristics similar to MOSFET(f) IGBT has dynamic characteristics similar to BJT

In a semiconductor diode, the barrier offers opposition to(1 Point)Majority carriers in both regionsMajority as well as minority carriers in both regionsminority carriersNone of the above

Which of the following statements are NOT true about Mobile Computing?Group of answer choicesMobile devices are attractive to users because they contain a high degree of personalisationMobile devices lack the computing power required for some e-commerce transactionsMore people are using mobile devices for internet transactions than other devicesMobile devices are commonly used because they can be used wherever required

Which of the following is/are a Compound semiconductor?1 pointNone of the options are correctGeSiInPAll options are correct

1/1

Upgrade your grade with Knowee

Get personalized homework help. Review tough concepts in more detail, or go deeper into your topic by exploring other relevant questions.