The ideal input resistance of a MOSFET (Metal Oxide Semiconductor Field Effect Transistor) is considered to be infinite. This is because the gate of a MOSFET is insulated from the channel by a thin layer of metal oxide. Therefore, ideally, no current should flow into the gate. This implies that the input resistance, which is voltage divided by current (Ohm's law), should be infinite (since the current is ideally zero).

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The ideal input resistance of a MOSFET (Metal Oxide Semiconductor Field Effect Transistor) is considered to be infinite. This is because the gate of a MOSFET is insulated from the channel by a thin layer of metal oxide. Therefore, ideally, no current should flow into the gate. This implies that the input resistance, which is voltage divided by current (Ohm's law), should be infinite (since the current is ideally zero).

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The ideal input resistance of a MOSFET (Metal Oxide Semiconductor Field Effect Transistor) is considered to be infinite. This is because the gate of a MOSFET is insulated from the channel by a thin layer of metal oxide. Therefore, ideally, no current should flow into the gate. This implies that the input resistance, which is voltage divided by current (Ohm's law), should be infinite (since the current is ideally zero).

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