Transconductance of MOSFET in triode region is given by

The transconductance (gm) of a MOSFET in the triode region is given by the following equation:

gm = (2 * Id) / (Vgs - Vth)

Where:

• Id is the drain current,
• Vgs is the gate-source voltage, and
• Vth is the threshold voltage.

Here are the steps to calculate it:

1. Measure or determine the values of Id, Vgs, and Vth. These values are typically provided in the problem statement or can be measured in a lab setting.

2. Subtract Vth from Vgs. This gives you the overdrive voltage, which is the amount by which the gate-source voltage exceeds the threshold voltage.

3. Multiply the drain current (Id) by 2.

4. Divide the result from step 3 by the result from step 2. This gives you the transconductance of the MOSFET in the triode region.

Remember, this equation is only valid when the MOSFET is in the triode region, which is when Vds < Vgs - Vth. If the MOSFET is in the saturation region, a different equation would be used to calculate the transconductance.