A doped silicon wafer has a thickness of 0.5 mm and a Hall coefficient of 2 × 10−2. Ifthe current through the wafer is 7.5 mA, find the Hall voltage for a magnetic flux densityof 0.2 T.
Question
A doped silicon wafer has a thickness of 0.5 mm and a Hall coefficient of 2 × 10−2. Ifthe current through the wafer is 7.5 mA, find the Hall voltage for a magnetic flux densityof 0.2 T.
Solution
The Hall voltage can be calculated using the Hall effect formula:
V_H = R_H * I * B / t
where: V_H is the Hall voltage, R_H is the Hall coefficient, I is the current, B is the magnetic flux density, and t is the thickness of the wafer.
Substituting the given values into the formula:
V_H = 2 × 10^-2 * 7.5 × 10^-3 * 0.2 / 0.5 × 10^-3
Solving the above expression gives:
V_H = 0.006 V or 6 mV
So, the Hall voltage for a magnetic flux density of 0.2 T is 6 mV.
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