Which of these are dependent on the temperature?Group of answer choicespn junction capacitancethe forward bias voltagediffusion current densitydiode currentdepletion width of a pn junction.

1. pn junction capacitance: The capacitance of a pn junction is not directly dependent on temperature. It is more dependent on the applied reverse bias voltage. However, temperature can have an indirect effect as it can change the properties of the semiconductor material.

2. The forward bias voltage: The forward bias voltage is not directly dependent on temperature. However, the current flowing through the diode under forward bias conditions is temperature dependent, which can indirectly affect the forward bias voltage.

3. Diffusion current density: The diffusion current density is dependent on temperature. As the temperature increases, the number of charge carriers increases, which leads to an increase in the diffusion current density.

4. Diode current: The diode current is dependent on temperature. According to the Shockley diode equation, the diode current increases with the increase in temperature because the thermal voltage (a part of the equation) is directly proportional to the absolute temperature.

5. Depletion width of a pn junction: The depletion width of a pn junction is not directly dependent on temperature. It is more dependent on the doping concentration and the applied reverse bias voltage. However, similar to the pn junction capacitance, temperature can have an indirect effect as it can change the properties of the semiconductor material.

So, the diffusion current density and diode current are directly dependent on the temperature.