If threshold degradation of both MOSFETS are neglected then F is

Arrange the six figures labelled (A) to (F) in the proper sequential order to show: (1) PN junction depletion region around the drain and source(2) Small positive voltage applied to gate creating a depletion region beneath the gate by pushing away the mobile holes.(3) The gate voltage is at the threshold voltage where the number of mobile electrons and holes beneath the gate are approximately equal.(4) The gate voltage is above the threshold voltage and there are electrons beneath gate forming a "inversion" layer of charge.(5) The drain voltage is increased to the Pinch-off voltage where the reverse-biased depletion region between the n-type drain and p-type substrate increases so that the inversion layer of charge disappears (or is pinched-off) at the drain.(6) The drain voltage is increased beyond the Pinch-off voltage and the effective channel length beneath the gate decreases. (A) (B)(C)  (D) (E) (F)Group of answer choicesB,D,A,F,C,EE,C,F,A,B,DB,D,A,F,E,CD,B,F,A,C,E

In which of following region of MOSFET the drain to source current becomes constant?Asaturation regionBcut off regionCohmic regionSubmit Answer

The process of  reduction of threshold voltage of the transistor at higher drain voltages is called as

Transmission gate is used to solve1 pointChannel length moulation in nmosThreshold degradation in nmos and pmosBody effect in pmosAll the above

MOSFET has a thin layer of Silicon Oxide at the Gate terminal, which acts as Select one:a. Resistorb. Inductorc. Capacitord. Semiconductor