Which one of the following statement is false ?The resistance of intrinsic semiconductor decreases with increase of temperature.Pure Si doped with trivalent impurities gives a p-type semiconductor.Majority carriers in a n-type semiconductor are holesMinority carriers in a p-type semiconductor are electrons.
Question
Which one of the following statement is false ?The resistance of intrinsic semiconductor decreases with increase of temperature.Pure Si doped with trivalent impurities gives a p-type semiconductor.Majority carriers in a n-type semiconductor are holesMinority carriers in a p-type semiconductor are electrons.
Solution
The false statement is: "Majority carriers in a n-type semiconductor are holes."
In an n-type semiconductor, the majority carriers are electrons, not holes. This is because n-type semiconductors are created by doping a pure semiconductor (like silicon or germanium) with an impurity that has more valence electrons than the semiconductor. This extra electron is loosely bound to the atom and can easily move around, making it the majority carrier.
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