Which of the following features are exactly followed by IGBT(a) IGBT has bipolar voltage blocking capability. (b) IGBT has unipolar voltage blocking capability. (c) IGBT is a bidirectional current device. (d) IGBT is a unidirectional current device.(e) IGBT has dynamic characteristics similar to MOSFET(f) IGBT has dynamic characteristics similar to BJT Select one:a. a, d, eb. b, c, fc. b, c, ed. a, d, f
Question
Which of the following features are exactly followed by IGBT(a) IGBT has bipolar voltage blocking capability. (b) IGBT has unipolar voltage blocking capability. (c) IGBT is a bidirectional current device. (d) IGBT is a unidirectional current device.(e) IGBT has dynamic characteristics similar to MOSFET(f) IGBT has dynamic characteristics similar to BJT Select one:a. a, d, eb. b, c, fc. b, c, ed. a, d, f
Solution
The correct answer is a. a, d, e.
Here's why:
(a) IGBT has bipolar voltage blocking capability. This is true. IGBTs are designed to combine the voltage-blocking capability of a bipolar transistor with the high input impedance and switching speed of a MOSFET.
(b) IGBT has unipolar voltage blocking capability. This is false. IGBTs have bipolar voltage blocking capability, not unipolar.
(c) IGBT is a bidirectional current device. This is false. IGBTs are unidirectional (one-way) current devices.
(d) IGBT is a unidirectional current device. This is true. IGBTs are designed to allow current to flow in one direction only.
(e) IGBT has dynamic characteristics similar to MOSFET. This is true. IGBTs are designed to have the high input impedance and fast switching characteristics of a MOSFET.
(f) IGBT has dynamic characteristics similar to BJT. This is false. While IGBTs do have some characteristics in common with BJTs, their dynamic characteristics are more similar to those of a MOSFET.
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